2003 年 44 巻 12 号 p. 2599-2604
Cross sectional structures of surface blisters and their precursors in SiC formed by H+, D+ and He+ irradiation were examined with transmission electron microscopy and electron energy-loss spectroscopy. The substructures of the H+- and D+-irradiated samples showed similar features, and experimental results suggested that H2 and CH4 bubbles nucleated after H(D)-trapping sites were saturated and the first nucleated bubbles grew by absorbing the gas molecules formed by further ion irradiation, followed by lift-up of the surface layer with increasing the internal pressure. The implanted hydrogen atoms other than those forming bubbles were scattered in atomic form, preferably bonded to carbon atoms. On the other hand the substructure of He+ irradiated sample was very similar to that of metals and other materials irradiated by He+, and it is considered that the formation mechanism of He-blister is common for most materials.
