Characterization of Nanodome on GaN Nanowires Formed with Ga Ion Irradiation

Shunsuke Muto; Sandip Dhara; Anindya Datta; Chi-Wei Hsu; Chin-Ting Wu; Ching-Hsing Shen; Li-Chyong Chen; Kuei-Hsien Chen; Yuh-Lin Wang; Tetsuo Tanabe; Tadashi Maruyama; Hong-Ming Lin; Chia-Chun Chen

doi:10.2320/matertrans.45.435

Shunsuke Muto, Sandip Dhara, Anindya Datta, Chi-Wei Hsu, Chin-Ting Wu, Ching-Hsing Shen, Li-Chyong Chen, Kuei-Hsien Chen, Yuh-Lin Wang, Tetsuo Tanabe, Tadashi Maruyama, Hong-Ming Lin, Chia-Chun Chen

著者情報

キーワード: GaN, nanowires, ion bombardment, transmission electron microscopy, electron energy-loss spectroscopy, energy-filtering transmission electron microscopy

ジャーナルフリー

2004 年 45 巻 2 号 p. 435-439

DOI https://doi.org/10.2320/matertrans.45.435

詳細

抄録

Structure of nano-domes formed by Ga⁺ ion irradiation with a focused ion beam (FIB) apparatus onto GaN nanowires (NWs) was examined with conventional transmission electron microscopy (CTEM), electron energy-loss spectroscopy (EELS) and energy-filtering TEM (EF-TEM). The nano-dome consisted of metallic gallium, covered by a GaN layer, the structure of which is amorphous or liquid. It is considered that the dome structure is formed by preferential displacement of lighter element (N) and agglomeration of heavier one (Ga). 1 MeV electron irradiation onto the sample pre-irradiated by Ga⁺ ions at a dose below the threshold for the dome formation induced the N₂ bubble formation without segregating Ga atoms, which suggests the radiation-enhanced diffusion (RED) of heavy atoms plays an important role in the nano-dome formation.

責任著者(Corresponding author)

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