MATERIALS TRANSACTIONS
Online ISSN : 1347-5320
Print ISSN : 1345-9678
ISSN-L : 1345-9678
Growth and Magic Behavior of Metal Encapsulated Silicon Clusters
Hiroaki KawamuraVijay KumarYoshiyuki Kawazoe
著者情報
ジャーナル フリー

2004 年 45 巻 5 号 p. 1429-1432

詳細
抄録

Metal encapsulated silicon clusters M@Sin (M = Ti and Cr and n = 8−16) have been studied using ab-initio ultrasoft pseudopotential method. Several structures for each cluster have been optimized to obtain the lowest energy isomers. Our results show that cage structures begin to form at the size of n = 12 for Cr@Sin and 13 for Ti@Sin. For Ti@Sin our results are in excellent agreement with the available experimental results. In smaller size, metal doped silicon clusters have basket structures to be of the lowest energy. The bonding nature in these clusters is discussed from the electronic charge distribution.

著者関連情報
© 2004 The Japan Institute of Metals and Materials
前の記事 次の記事
feedback
Top