2007 年 48 巻 12 号 p. 3149-3153
Ca-P-O films were prepared by MOCVD using Ca(dpm)2 and (C6H5O)3PO precursors. The crystal phase changed with changing deposition conditions of substrate temperature (Tsub), total pressure (Ptot) and molar ratio of Ca and P precursors (RCa/P). α-tricalcium phosphate (α-Ca3(PO4)2) in a single phase was obtained at Tsub=973 K, RCa/P<0.3 and Tsub=1073 K, RCa/P=0.1 to 0.5. Hydroxyapatite (Ca10(PO4)6(OH)2) in a single phase was first prepared by MOCVD at Tsub=973 K, RCa/P=0.5 and Tsub=1073 K, RCa/P=0.8 to 1. The maximum deposition rate of α-TCP and HAp films in a single phase were 6.0 and 4.0 nm s−1 at Ptot=0.8 kPa and Tsub=1073 K, respectively.
