Impact of High Heating Rate, Low Temperature, and Short Time Annealing on the Realization of Low Resistivity Cu Wire

抄録

Low resistivity Cu wires were obtained by high heating rate, short time, and low temperature annealing even at a temperature 100 K lower and for a time 67% shorter than the conventional H₂ annealing temperature and time. This was due to promotion of the grain growth by the release of grain boundary energy when the heating rate to the peak temperature was set at 1.7 K/s. Resistivity of Cu wires made by the new process at 573 K was lower than that of wires made by conventional H₂ annealing at 673 K for 30 min.