2011 年 52 巻 8 号 p. 1560-1564
The Zn-In-Sn-O (ZITO) transparent conductive oxide (TCO) films were deposited onto indium/glass substrate by co-sputtering system. The bias-crystallization mechanism (BCM) was used to promote the quality of ZITO films. After biasing treatment (biased at 4 V for 20 min), the resistivity of ZITO film reduced from 3.08×10−4 Ω*cm to 6.3×10−5 Ω*cm. This reduction was attributed to the indium ions diffused into ZITO film using BCM. According to the Joule’s law and Ohm’s law, the required energy of biasing treatment was only 480 Joule. Comparing with traditional annealed treatment (annealing at 500°C for 20 min in vacuum required 9.8×106 Joule), BCM had improved the conductivity of ZITO film in a short time at room temperature and possessed an excellent competitiveness of cost.
