Effect of Additive-Free Plating and High Heating Rate Annealing on the Formation of Low Resistivity Fine Cu Wires

抄録

Low resistivity Cu wires were developed by the combination of lessening impurities through additive-free plating and high heating rate annealing. Resistivities of Cu wires made with the new method were about 30% lower than those made by conventional plating with additives and annealing at the same temperature in H₂. Low resistivity Cu wires were realized even at temperatures 100 K lower than conventional annealing temperatures due to substantial grain growth by the high heating rate annealing in the Cu wires made with the additive-free plating.