2017 年 58 巻 5 号 p. 813-816
The Sm-Fe thin films were prepared by a DC magnetron sputtering system installed the Langmuir probe with various substrate bias voltage. In this work, internal stress of the Sm-Fe thin films was investigated considering ion bombardment. The influence of ion bombardment on internal stress in films was estimated by the ion bombardment parameter (Pi). The Pi increased with increasing negative substrate voltage. Internal stress of Sm-Fe thin films showed a larger compressive stress with increasing amount of the Pi. The magnetostrictive susceptibility of Sm-Fe thin films was improved by increasing compressive stress. The magnetostrictive susceptibility of the Sm-Fe thin film was dependent on the Pi.
