Evaluation of Bonding Strength and Interfacial Resistance of Diffusion-Bonded Ag/Si Interfaces

抄録

Diffusion bonding of silicon and pure silver was performed and the bonding strength and electrical resistivity were measured. Diffusion bonding was performed under a uniaxial pressure (10, 20 MPa) at 1103 K in an argon atmosphere and bonding status was observed using a scanning electron microscope. It was found that the strength of a joint increases as the bonding time increases until 90 min for both the bonding pressures. There is no clear trend in resistivity variation with bonding time. In addition, the resistance increased by about 0.3% compared to that of silicon only. Silver is a good candidate for an electrode material for silicon because it is bonded to silicon well and there is no insulating layer formed such as an intermediate compound.