抄録
Polycrystalline copper and silver films, about 2 to 10 μ thick, were vacuum-deposited on glass substrates using tungsten baskets. The variations of 0.2% offset yield stresses and microstructures of the films by annealing at various temperatures ranging from 100° to 1000°C were investigated. The grain size, which was about 2000 Å in diameter in an as-deposited state, increased to several microns in diameter after annealing. The grain size and recrystallization temperature were extremely affected by the deposition condition. The recrystallization temperature of copper films of 10−4 Torr rose above 800°C when the deposition was done in a high residual gas pressure. It is inferred that the fine dispersion of oxide in the films is responsible for the rise of the recrystallization temperature. The strength of the fine-grained films was agreed well with that expected from the Hall-Petch relation.
