抄録
Atomic configurations of various lattice defects, dislocations and stacking faults introduced by plastic deformation and ion bombardment, were investigated by high resolution electron microscopy for CdS and CdSe single crystals both with the wurtzite structure. Both perfect and dissociated dislocations on the basal plane were observed to be stable for both crystals. Image-processed micrographs were utilized to analyze the strain field around dislocations. The energy of the intrinsic stacking fault on the basal plane was estimated to be 14±4 and 14±5 mJ/m2 for CdS and CdSe, respectively, from the widths of the dissociated dislocations. Interstitial type Frank loops were observed to be produced during the ion-thinning process. The loops were frequently formed on intrinsic stacking faults, previously introduced by plastic deformation, to reduce the fault energy.
