Physico-Chemical Study on Lead Selenide

Abstract

Single crystals of PbSe were heat-treated in selenium vapor in order to control the deviation from the stoichiometric composition. The Hall effect measurement was made over the temperature range from 77°K to 300°K. The carrier concentration was found to be proportional to ±1⁄4 power of the selenium pressure. This fact can be regarded as evidence for the view that the native defect in PbSe is cation or anion vacancy.
Intrinsic carrier concentration n_i can be represented as n_i=10^14.65T^3⁄2exp(−0.115⁄kT).