抄録
Eleven Al-Zn base ternary alloys were studied by the measurement of electrical resistivity. An approximate method to estimate the binding energy between an atom of a third element and a vacancy was derived. The binding energy between a vacancy and an atom of Cu, Ag, Ca, Cd, In, Si, Ge, Zr, Sn or Mn (or upper limit of them) was estimated to be <0.23, <0.23, 0.27, 0.32, 0.39, 0.28, 0.33, 0.33, 0.43 or <0.23 (±0.05)eV, respectively. The results may be summarized as follows:
(1) The ratio of the time required to reach the maximum electrical resistivity in isothermal aging curves of the Al-Zn-X ternary alloy to that in the binary alloy may be inversely proportional to the ratio of the concentration of vacancies bound to Zn atoms immediately after quenching in the ternary alloy to that in the binary alloy. It is possible to deduce the binding energy between an atom of an X element and a vacancy using this relation.
(2) The binding energies determined by this method agree very well with those obtained by other authors with other methods. This fact may be considered to show reliability of this method for determination of the binding energy.
(3) The effect of the valence of the solute element on the binding energy between an atom of a third element and a vacancy was remarkable.
(4) The effect of the radius of an atom of the solute element on the binding energy is also observed, but this effect is smaller than that of the valence.
