Activity Measurements of Ga in GaAs–InAs Solid Solutions by the EMF Method

Abstract

E.M.F. of galvanic cells with the solid electrolyte (ZrO₂+CaO) was measured to determine the activities of gallium in the whole composition range for GaAs–InAs solid solutions coexisting with arsenic-poor ternary liquid phases in the temperature range 973 to 1173 K. The cell used was as follows:
(−)Ga, Ga₂O₃|ZrO₂(+CaO)|(GaAs)_x(InAs)_1−x, Ga, Ga₂O₃(+)
Activity of gallium is small, changes linearly with the concentration of GaAs up to a 0.7 mole fraction of GaAs, and increases very sharply in the GaAs-rich region. There seems to be no data which can be directly compared with the results in this study.