Materials Transactions, JIM
Online ISSN : 2432-471X
Print ISSN : 0916-1821
ISSN-L : 0916-1821
Microstructure of a Molecular-Beam-Epitaxy-Grown Platinum Film on Silicon (111)-(7×7) Substrate with Copper Buffer Layer
Kouichi NishikawaMasahiko YamamotoToshiki Kingetsu
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1995 年 36 巻 8 号 p. 1012-1017

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Microstructure of a molecular-beam-epitaxy-grown (MBE-grown) Pt film extracted from Pt(100 nm)/Cu(5 nm)/Si(111)-(7×7) was investigated with transmission electron microscopy as a fundamental research of Pt/Co multilayers. It is found that there exist two kinds of band-like structures along Si steps, characterized by two kinds of orientational relationships: Pt(111)⟨11\bar2⟩//Cu(111)⟨11\bar2⟩//Si(111)[1\bar10] and Pt(111)⟨1\mpδ 1±δ \bar2⟩//Cu(111) ⟨1\mpδ 1±δ \bar2⟩//Si(111)[1\bar10] where δ=0.076. The misorientation between them is exhibited by rotation of 2.5 degrees around [111] axis. It is considered that the misorientation formed between bands is caused by the growth of Si(111) terraces without any step.
As to the microstructure within the bands, it is found that there exist two kinds of variants which are in the relation of 180 degrees rotational twin. The interfaces between the variants facet in {11\bar2} planes, which are perpendicular to the film and thus Pt film keeps single crystal in the depth direction of the film. Each variant consists of a number of grains.
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© The Japan Institute of Metals
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