Scaling Analysis of Semiconductor Crystal Growth from the Liquid Phase in an Axis Static Magnetic Field

Abstract

A formulation of the relation between static magnetic induction and Reynolds number in liquid, for vertical Bridgman and LPE growth processes of semiconductors in axial static magnetic field was derived based on a scaling analysis, and the validity of the estimation was experimentally investigated. The calculated values of the effective segregation coefficients for Ga-doped Ge and Pb_1−xSn_xTe crystals grown by the Bridgman method agreed well with the experimentally measured ones from 0 to 6 T of the magnetic induction. In the case of LPE growth on GaP(111)B, nearly diffusion-controlled condition in the liquid was achieved at 6 T. It was shown by in situ observation using a near-infrared (NIR) microscopic interferometer that the static magnetic field reduced the LPE growth rate, and as a result, suppressed appearance of macro-steps and hillocks.