Proceedings of Microelectronics Symposium
Online ISSN : 2434-396X
MES2018
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Host: Japan Institute of Electronics Packaging

MES2018
Analysis of High-Frequency Response Characteristics of InGaAs HEMTs under Irradiation with DC Light at a Wavelength of 1480 nm
*[in Japanese], [in Japanese], [in Japanese], [in Japanese]
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CONFERENCE PROCEEDINGS FREE ACCESS

Pages 327-330

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© 2018 The Japan Institute of Electronics Packaging
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