A NEW POLYTYPE OF SILICON CARBIDE, 45R, AND ITS STRUCTURE ANALYSIS ACCORDING TO A SIMPLE ASSUMPTION NEWLY INTRODUCED

抄録

A new type of silicon carbide consisting of 45 layers was formed in high silicon vapour atmosphere at 2, 300°C. The structure of this polytype was determined with the aid of a simple assumption newly introduced; SiC polytypes belonging to high temperature phases will not have in their layer sequences such an element as represented by the Zhdanov symbol 1. The structure of this polytype thus derived is represented as (332232)₃. The validity of the above assumption is discussed.