2017 Volume 2017 Issue 51 Pages 14-21
Abstract Cu2SnS3 thin films have been expected for low-cost and non-toxic absorber materia1 of compound solar cells. However，the reported power conversion efficiencies of Cu2SnS3 based thin fi1ms solar cel1s have unachieved 10% because of unfine Cu2SnS3 film quality. In this work，Cu2SnS3 thin films were prepared through su1furization of evaporated Cu-Sn precursors that Cu/Sn ratios were 2.00 and 1.75. This work found its improvement of generated voids in thin films，absorption，and composition by preparation under conditions: Cu/Sn ratio of 1.75，substrate temperature Ts of 300℃，annealing temperature of 500℃，and deposition rate of 1 Å/s. Cu2SnS3 thin film that were prepared by these conditions showed band gaps of 1.01 eV，absorption coefficient over 104 cm-1 and Cu/Sn ratio of 1.92. Keywords [Cu2SnS3，thin films，solar cell]
