Evaluation of SuS Thin Films Prepared by Thermal Evaporation

Abstract

Abstract Tin(II) Sulfide (SnS) thin films are one of the most promising materials for high efficiency solar cells without using rare metals. In this work，SnS thin films were deposited on glass substrates by thermal evaporation at different substrate temperatures. SnS thin film prepared at substrate temperature of 300℃ had relatively low resistivity，flat surface and few void. This evaporated film was annealed in H2S atmosphere from 100 to 500℃ for 1 hour. The results of crystalline structure and band gap of the thin film annealed at 200℃ indicated SnS phase and direct energy band gap of 1.25 eV，respectively. Moreover the number of void in the thin film annealed above 300℃ was decreased. Therefore the high quality SnS thin film can be prepared by annealing in H2S atmosphere between 200℃ and 300℃. Keywords [SnS thin film，Thermal evaporation]