Development of high heat-resistance molding compound material for power semiconductors

Abstract

Toward realization of “low-Carbon Society”, power semiconductors are becoming extremely important to use energy effectively. In recent years, application of SiC (Silicone Carbide) and GaN (Gallium Nitride) have been actively studied as a next generation semiconductor element that can achieve higher efficiency than Si (Silicone). Along with the application of SiC or GaN, characteristics such as high heat resistance are required for power devices. We developed epoxy resin molding compound (EMC) for power semiconductors and found some factors. Firstly, low ion impurity and high Tg of EMC improve the reliability such as HTRB. Secondly, EMC CTE matching with PKG components (Cu, SiC etc) is key point for temperature cycle. Thirdly, we found the new type resin structure based on the rigid biphenylene skeleton which can achieve both high Tg and high heat resistance. Furthermore, EMC is expected to contribute to worldwide environmental preservation measures and future development.