2019 年 56 巻 2 号 p. 76-79
We developed a plasma-assisted deposition (PAD) method to produce a gallium-doped zinc oxide (GZO) transparent conductive film that can replace conventional indium tin oxide (ITO) transparent conductive film.The GZO can be produced at a low cost by using abundant resources and inexpensive zinc as the main raw material and without using expensive rare metals. The PAD film-forming method is characterized by a low-temperature process and the absence of ions in the film-forming chamber, therefore enabling easyfilm-formation on a plastic substrate. This method realizes a productivity cost of 10% or less than that of ITO transparent conductive film and enables a soft film-formation that resists damage even when the film is formed on a device. The vertical roll-to-roll deposition system developed as the GZO deposition system is space-saving, realizes excellent maintainability, and can be applied invarious deposition systems.