Abstract
P(St-co-MVK)-47 (copolymer of styrene with methyl vinyl ketone containing 47mol% ketones was synthesized by the radical polymerization. It is shown that the copolymer has a novel positive working Deep UV photoresist with high sensitivity, resolution and etching resistance. Sensitivity of ca. 75mJ/cm2 was achieved under Deep UV irradiation. Resolution of 0.75μm was obtained by the 0.66μm thickness coatings Postbaking (180°C, 10min) after development improves the etching resistance. Several advantages of introducing P(St-co-MVK)-47 into the field of Deep UV lithography have been also discussed.
