小特集 「VLSI超微細画像形成技術の展望」

マスクによる超微細画像形成技術

抄録

As a pattern formation technology, the exposure method using photo masks is superior in productivity to any other methods, so it has been utilized in many kinds of industrial fields for a long time. This paper describes about various masks and pattern formation technologies using them in the field of ULSI. Photolithography has been changed from the contact printing to the proximity and mirror projection. At the present time, the optical stepper lithography is the main method for ULSI production and it will be making rapid progress to the phase shift and excimer laser lithography. X-ray, electron-beam and ion-beam lithographyies using masks are expected for next methods to print fine patterns less than a quater micron.