1982 年 1982 巻 11 号 p. 1847-1848
In the growth of TiN whiskers from the TiCl4-N2-H2 system, the addition of SiHCl3 vapor or the predeposition of Si on substrate increased the whisker density and the growth rate in the r, adial direction but decreased the growth rate in the axial direction. In the case of TiC whiskers, the presence of SiHCl3 vapor suppressed the whisker growth remarkably.
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