Preparation of Photoconductive Amorphous Silicon Films by Chemical Deposition

Abstract

A novel method for preparing amorphous Silicon films is proposed, in which silane is decomposed oxidatively to afford the precursors responsible for the deposition by a chemical reaction with fluorine at reduced pressure. The proposed technique is quite simple and provides a feasibility of controlling over the chemical structure and the hydrogen content in the films through the external parameters in the gas phase reaction. The films show high photoconductivity comparable to those pre pared by rf-glow discharge of silane.