Photoelectric Properties of Gallium Phthalocyanine

Abstract

Photoelectric properties of evaporated gallium phthalocyanine thin films under vacuum and dry atmosphere were investigated with a sandwich-typed cell configuration of SnO₂/GaClPc/Ag. The photoinduced current spectrum ; induced current with step steady state incident light without an applied voltage and rectification properties under the dark state were discussed.
When the cell was illuminated through the NESA electrode, the photoinduced current spectra agreed approximately with the absorption spectrum of the GaClPc. These results indicate that a potential barrier is formed in the PN heterojunction at SnO₂/GaClPc interface. Excellent rectification characteristics were observed under the dry atmosphere. In the vacuum, however, these characteristics were missed with passage of time. A series of these phenomena was reversible under the vacuum and the dry atmosphere. The energy band structure of the cell is estimated from these experimental results.