MOCVD原料としての高純度Pb(dpm)2の特性
1992 年 1992 巻 8 号 p. 881-884
詳細
1992 年 1992 巻 8 号 p. 881-884
In order to replace Pb (C2H5)4, which is highly toxic, bis(2, 2, 6, 6-tetramethyl-3, 5-heptanedionato)lead( II ), Pb(dpm)2 was syntesized as a new source material for preparation of ferroelectric thin filme by MOCVD. Pb(dpm)2 was characterized with ICP, elemental analysis, TG-DTA, FT-IR, 11-I-NMR, and 13C-NMR. Vaporization of Pb (dpm)2 started at 105°C as the temperature was raised and steep weight loss was observed in the range of 200 to 280 °C. The vaporization of impurities was not found in TG-DTA. The vaporization completed below 300 °C without residue. Pb (dpm)2 proved to be superior in volatility and purity for the MOCVD source material.
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