Abstract
Thermal properties of tri (o-toly)bismuth (Bi(o-Tol)3) used as a bismuth precursor for metalorganic chemical vapor deposition (MOCVD) were evaluated. The saturated vapor pressure of Bi (o-Tol)3 was observed under the decomposition point, about 210°C by means of vapor pressure measurement. The temperature dependence of the saturated vapor pressure of Bi(o-Tol)3 was determined as follows, log P(evap.)Torr=-6267/T+13.45. It was confirmed that Bi (o-Tol)3 has higher thermal stability compare d with a conventional bismuth precursor, triphenylbismuth (BiPh3) by thermogravimetry and differential thermal analysis measurements of the compounds before and after preparation of oxide thin films by MOCVD method.
