Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GaInNAs/GaAs Single Quantum Well Laser Diode

Abstract

Temperature stability of the threshold current and the lasing wavelength is investigated in a 1.3-μm GaInNAs/GaAs single quantum-well laser. The measured characteristic-temperature was 88 K. The small wavelength shift per change in temperature of 0.35 nm/°C was obtained, indicating the superior lasing-wavelength stability. Therefore, it is shown experimentally that GaInNAs is very promising material for the fabrication of light source with excellent high-temperature performance for optical fiber communications.