Optical Review
Print ISSN : 1340-6000
ISSN-L : 1340-6000
Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GaInNAs/GaAs Single Quantum Well Laser Diode
Takeshi KITATANIMasahiko KONDOWKoji NAKAHARAM. C. LARSONKazuhisa UOMI
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1998 年 5 巻 2 号 p. 69-71

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Temperature stability of the threshold current and the lasing wavelength is investigated in a 1.3-μm GaInNAs/GaAs single quantum-well laser. The measured characteristic-temperature was 88 K. The small wavelength shift per change in temperature of 0.35 nm/°C was obtained, indicating the superior lasing-wavelength stability. Therefore, it is shown experimentally that GaInNAs is very promising material for the fabrication of light source with excellent high-temperature performance for optical fiber communications.
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© 1998 by the Optical Society of Japan
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