Oyo Buturi
Online ISSN : 2188-2290
Print ISSN : 0369-8009
Comprehensive Research Report
Present status and future prospect of widegap semiconductor high-frequency devices
Hajime OKUMURA
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JOURNAL FREE ACCESS

2004 Volume 73 Issue 3 Pages 315-326

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Abstract

High-power high-frequency device technology is a key technology for a wireless communication system, which is the information network infrastructure of the 21st century. Widegap semiconductors, such as GaN and SiC, are strongly expected as high-power high‐frequency devices owing to their material properties. In this paper, the present status and future prospect of these widegap semiconductor high-frequency devices are reviewed.

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© 2004 The Japan Society of Applied Physics
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