2004 Volume 73 Issue 3 Pages 315-326
High-power high-frequency device technology is a key technology for a wireless communication system, which is the information network infrastructure of the 21st century. Widegap semiconductors, such as GaN and SiC, are strongly expected as high-power high‐frequency devices owing to their material properties. In this paper, the present status and future prospect of these widegap semiconductor high-frequency devices are reviewed.