Recent developments in SiC high-frequency devices

Abstract

Silicon carbide (SiC) is a promising material for fabricating high-power and high-frequency devices because of its superior properties. SiC high-frequency devices are expected to be used for applications such as power amplifiers for base station transmitters and power modules for radar systems. We developed SiC-MESFETs and evaluated their DC and RF characteristics. In this paper, I will give the current status of the SiC high-frequency devices-SIT, JFET, BJT, and IMPATT diodes-that were developed by other institutions, and describe the experimental results obtained from the MESFETs that were developed by us.