Present status of III-nitride semiconductor high-frequency electron devices

Abstract

This paper gives an overview of recent research activities on high-frequency electron devices using III-nitride semiconductors. The advantages of utilizing nitride semiconductor heterojunctions as high-voltage and high-power electron devices at microwave frequencies are discussed. The device processing and structural design are described, focusing on the importance of improved breakdown characteristics enabled by the introduction of a field plate. The DC, small-signal and power performance of the fabricated devices is presented. Finally, the future subjects and prospects of nitride heterojunction devices and their applications are discussed.