Local bond breaking on semiconductor surfaces induced by laser beam

Abstract

The excitation of semiconductor surfaces with laser pulses of intensities well below melting threshold induces breaking of surface atomic bonds, leading to the formation and progressive growth of vacancies as well as the desorption of constituent atoms, and the electronic processes have been shown to play important roles in the bond breaking.The rate of electronic bond breaking is superlinear with respect to excitation intensity and is also strongly dependent on the excitation wavelength.The electronic mechanism of laser-induced bond breaking is discussed on the basis of experimental results for Siｖ(001)ｖ-ｖ(2×1).