SiC power device technology

Abstract

Silicon carbide (SiC) has an electric breakdown field 10 times higher than that of silicon, and is expected to be an excellent material for next-generation high-voltage, low-loss power devices. Schottky barrier diodes (SBDs) have already been used for switching mode power supplies, and switching devices are being competitively developed in many research organizations and companies. In this article, after the fundamentals of SiC power device design are described, the current status of SiC power device development is introduced.