2005 Volume 74 Issue 6 Pages 749-754
With the aim of realizing high-quality SiC heteroepitaxial growth at low temperatures, various chemical vapor deposition (CVD) methods were investigated using organosilicon compounds, such as monomethylsilane (MMS) and dimethylsilane (DMS), which are nontoxic and nonpyrophoric, as source gases. The initial stages of the growth of SiC on Si (001), which influence the crystallinity and surface morphology of SiC films, were studied in detail by angle-resolved X-ray photoelectron spectroscopy (ARXPS), reflection high-energy electron diffraction (RHEED), and scanning tunneling microscopy (STM). In addition, the reaction processes from the Si (2×1) surface to the formation of the Si c(4×4) structure, SiC nucleation and the continuous film formation were fully elucidated. In addition to the above study, the heteroepitaxial growth of SiC films and the crystal growth of (100)-oriented SiC films on SiO2 using catalytic (Cat)-CVD were successfully carried out using MMS at a substrate temperature of 750°C.
