2008 Volume 77 Issue 7 Pages 809-812
Transparent amorphous oxide semiconductors (TAOS) have attracted considerable attention as an emerging technology for thin film transistors (TFTs). Unique features of TAOS compared with conventional amorphous Si are their high performance, low process temperature and transparency. Here, we focus our attention on the low process temperature and transparency of a TAOS TFT and demonstrate the potentiality of the TAOS TFT in an electronic paper application.