Current status and challenges of emerging ferroelectric-HfO₂ based memory devices

Abstract

For the move toward the next generation of computing, which will enable IoT and AI technologies, high-speed, high-capacity and low-power memory will be needed more than ever before. Recently, ferroelectricity has been discovered in a very common material, HfO₂, which is already used in the CMOS process. Ferroelectric-HfO₂ is attracting a lot of attention for memory device applications. What is so different from conventional ferroelectric materials? What opportunities will ferroelectric-HfO₂ give us? In this report, I will describe the impact of ferroelectric-HfO₂ on device society and then I will explain the current status and challenges of ferroelectric-HfO₂ memory devices.