Atomic layer etching with gas cluster ion beams

Abstract

Gas cluster ion beams (GCIBs) consisting of thousands of gas atoms or molecules provide high-density energy near a surface despite the ultra-low energy ions of a few eV. As a result, low-damage and low-temperature surface reaction enhancement are expected. We are investigating the application of GCIB irradiation to atomic layer etching (ALE). In this article, we present a low-temperature, halogen-free ALE study using GCIB irradiation on metal films with organic acid or diketone molecules as reactive molecules.