Abstract
Polycrystalline films of tin oxide doped with antimony are prepared on the substrate of polished Pyrex glass plates by CVD (Chemical Vapor Deposition) method. Their electrical properties and structures are investigated in relation to the surface temperature of the substrate and of the impurity concentration in films.
In the films, only SnO2 is detected as crystals, whose (200) and (301) planes are oriented parallel to the surface of the substrate and though their crystal size is influenced by the surface temperature, the impurity concentration seems to have no effect.
The films are assigned to be n-type semiconductors. The range of the carrier densities lies between 2×1019 and 5×1020/cm3 and that of mobilities between 18 and 35cm2/V•sec. The carrier density depends upon the antimony content and the surface temperature at the time of making samples. It is assumed that the mobility is influenced by the amount of the scattering due to ionized antimony and the boundary of agglomerated crystals.
