Abstract
The sintering process of diamond with an addition of Si under HIP condition was studied by the micro-structure analyses and x-ray diffraction. The Si melted at high temperatures, and the molten Si reacted with the diamond particle and SiC is formed, and then, the diamond particle sintered by the work of the formed SiC. The observed SiC width in the optical-micrographs of the HIPed diamond compacts increased with the rise in the temperature of HIP treatment, and at the temperature more than 1750°C, diamond particles disappeared because diamond particles perfectly reacted with the molten Si. The effect of the period and pressure of the HIP treatment on the generation of SiC was also studied.
