Amorphous transparent conducting In-Zn-O films prepared by pulsed laser deposition

Abstract

Structure and electrical properties of In-Zn-O films deposited by pulsed laser deposition were investigated. All films prepared at substrate temperatures up to 573 K were amorphous. The resistivity showed a minimum around an oxygen pressure of 1.3 Pa and decreased with increasing substrate temperature. The lowest resistivity was 2.89 × 10^-4 ohm cm at 573 K under 1.3 Pa.