Annealing Effects on Transparent Conducting Properties of Amorphous Thin Films in the Zinc Oxide-Indium Oxide System

Toshihiro Moriga; Akihiko Fukushima; Yukako Hayashi; Kumiko Kondo; Keiichiro Matsuo; Keiichiro Murai; Ichiro Nakabayashi

doi:10.14853/pcersj.2002F.0.325.0

15th Fall Meeting of The Ceramic Society of Japan

DOI https://doi.org/10.14853/pcersj.2002F.0.325.0

Conference information

Host: The Ceramic Society of Japan

Annealing Effects on Transparent Conducting Properties of Amorphous Thin Films in the Zinc Oxide-Indium Oxide System

Toshihiro Moriga, Akihiko Fukushima, Yukako Hayashi, Kumiko Kondo, Keiichiro Matsuo, Keiichiro Murai, Ichiro Nakabayashi

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Keywords: Indium Oxide, Transparent Conducting Properties, Annealing Effects, Hall Measurement

CONFERENCE PROCEEDINGS FREE ACCESS

Pages 325

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Abstract

The amorphous films in the ZnO-In₂O₃ system deposited by a facing-target DC magnetron sputtering technique exhibited increased carrier concentration and decreased Hall mobility after the annealing. These parameters counteracted each other so that the resistivity remained unchanged. Post-annealing under the reductive gas flow was effective only on improving unevenness of the amorphous films.

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