Growth Behavior and Dielectric Characteristics for Epitaxial Pb(Mg1/3, Nb2/3)O3 Films on Buffered-Si Substrates

Tomoaki Yamada; Naoki Wakiya; Kazuo Shinozaki; Nobuyasu Mizutani; Masao Kondo; Kazuaki Kurihara

doi:10.14853/pcersj.2002F.0.356.0

15th Fall Meeting of The Ceramic Society of Japan

DOI https://doi.org/10.14853/pcersj.2002F.0.356.0

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Host: The Ceramic Society of Japan

Growth Behavior and Dielectric Characteristics for Epitaxial Pb(Mg_1/3, Nb_2/3)O₃ Films on Buffered-Si Substrates

Tomoaki Yamada, Naoki Wakiya, Kazuo Shinozaki, Nobuyasu Mizutani, Masao Kondo, Kazuaki Kurihara

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Keywords: PMN, PLD, Silicon, buffer layer, epitaxial growth, dielectric characteristics

CONFERENCE PROCEEDINGS FREE ACCESS

Pages 356

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Abstract

Epitaxial Pb(Mg_1/3, Nb_2/3)O₃ (PMN) thin films were fabricated on various buffered-Si substrates by pulsed laser deposition (PLD), and the growth behaviors and dielectric characteristics were investigated. For La_0.5Sr_0.5CoO₃ (LSCO)/CeO₂/YSZ/Si and SrTiO₃/CeO₂/YSZ/Si substrates, PMN films were epitaxially grown with (001) and preferred-(001) orientation, respectively. On the other hand, for CeO₂/YSZ/Si substrate, Pb-Mg-Nb pyrochlore was epitaxially grown instead of perovskite phase. This phenomenon was considered from the viewpoints of crystal structural matching and interface stability between film and substrate.

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