Microstructure improvement of PZT thin film by changing source supply method using pulsed MOCVD.

Keisuke Fujito; Naoki Wakiya; Kazuo Shinozaki; Nobuyasu Mizutani

doi:10.14853/pcersj.2002F.0.355.0

15th Fall Meeting of The Ceramic Society of Japan

DOI https://doi.org/10.14853/pcersj.2002F.0.355.0

Conference information

Host: The Ceramic Society of Japan

Microstructure improvement of PZT thin film by changing source supply method using pulsed MOCVD.

Keisuke Fujito, Naoki Wakiya, Kazuo Shinozaki, Nobuyasu Mizutani

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Keywords: lead zirconium titanate, dielectric properties, ceramics integration, metal organic chemical vapor deposition, thin film, epitaxial

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Pages 355

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Abstract

Pb(Zr, Ti)O₃ (PZT) thin films were deposited by pulsed metal-organic chemical vapor deposition (MOCVD) on the MgO, LaAlO₃ and SrTiO₃ substrates. The microstructure of PbTiO₃ thin films were improved by the changing of pulsed MOCVD sequences. In the sequence which has vacuum duration after deposition of PT, Ti-rich composition of PT on MgO was obtained. The PT thin films deposited on SrTiO₃ with vacuum duration showed the lowest surface roughness RMS=0.390nm.

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