Abstract
Thin films of potassium tantalate have been prepared on Ta metal substrates in KOH solutions by the hydrothermal and the hydrothermal-electrochemical methods. Phase-pure perovskite-type KTaO3 thin films could be formed in 2.0 M KOH at 300°C. Pyrochlore-type K2Ta2O6 thin films were formed at lower temperatures and lower KOH concentrations. Lattice constant of the KTaO3 was almost the same as that in JCPDS-PDF, whereas lattice constant of K2Ta2O6 was 0.2% larger than the PDF value.