Abstract
Highly oriented In2O3 Whiskers were heteroepitaxitially grown on an optically polished (001) plane of the single crystalline substrate of yttria stabilized zirconia(YSZ) using the chemical-vapor-deposition technique employed at the atmospheric pressure. X-ray diffractometry revealed that the epitaxial relationship between the whiskers and the substrate was determined as In2O3 [100](001)//YSZ [100](001). In addition, the full-width at half maximum value of the (004) reflection was as low as 0.23°. Images obtained using a scanning electron microscope suggest that the whisker growth develops the elegant side-branch on the edge of the tetragonal columnar structure. The Kossel mechanism is one of the strong candidates for the mechanism of the whisker and side-branch.
