Preparation of high-squareness epitaxial (Ni, Zn)Fe2O4 thin film by optimization of buffer layer

Naoki Wakiya; Kazuo Shinozaki; Nobuyasu Mizutani

doi:10.14853/pcersj.2002F.0.461.0

15th Fall Meeting of The Ceramic Society of Japan

DOI https://doi.org/10.14853/pcersj.2002F.0.461.0

Conference information

Host: The Ceramic Society of Japan

Preparation of high-squareness epitaxial (Ni, Zn)Fe2O4 thin film by optimization of buffer layer

Naoki Wakiya, Kazuo Shinozaki, Nobuyasu Mizutani

Author information

Keywords: nickel zinc ferrite, PLD, buffer layer, silicon, epitaxial, ceramics integration

CONFERENCE PROCEEDINGS FREE ACCESS

Pages 461

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Abstract

The purpose of this work is to prepare epitaxial (Ni, Zn)Fe₂O₄ (NZF) ferrite thin films having high squreness (Mr/Ms) by optimization of buffer layer ((MgO-Al₂O₃)/CeO₂/YSZ). The orientation of NZF thin films were controlled by the content of Al₂O₃ addition. It was clarified that high squreness was realized for (111)-oriented epitaxial NZF thin film if the content of Al₂O₃ was around 40 mol%.

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