Recrystalization of BSCC thin films with the interfacial structure controlled by ion beam

Abstract

Effects of oxygen ion irradiation and subsequent thermal annealing of Bi-2212 films deposited on SrTiO₃(001) or MgO(001) using pulsed laser deposition were studied. The energies of the irradiating ions were chosen to amorphize the whole film, thus a part of the ions modified the film/substrate interface structure. It was found that compared to the simply heated film the ion irradiated and thermally annealed one showed an improved conducting behavior of Bi-2212 phase.